agilent ammc-6530 5C 30 ghz image reject mixer data sheet description agilents ammc-6530 is an image reject mixer that operates from 5 to 30 ghz. the cold channel fet mixer is designed to be an easy-to-use component for any chip and wire application. it can be used drain pumped for low conversion loss applications, or when gate pumped the mixer can provide high linearity for ssb up-conversion. an external 90-degree hybrid is used to achieve image rejection and a -1v voltage reference is needed. intended applications include microwave radios, 802.16, vsat, and satellite receivers. since this one mixer can cover several bands, the ammc-6530 can reduce part inventory. the integrated mixer eliminates complex tuning and assembly processes typically required by hybrid (discrete-fet or diode) mixers. for improved reliability and moisture protection, the die is passivated at the active areas. absolute maximum ratings [1] symbol parameters/conditions units min. max. v g gate supply voltage v 0 -3 p in cw input power dbm 25 t ch operating channel temperature c +150 t stg storage case temperature c -65 +150 t max max. assembly temp (60 sec max) c +300 note: 1. operation in excess of any one of these conditions may result in permanent damage to this device. features ? broad band performance 5 C 30 ghz ? low conversion loss of 8 db ? high image rejection of 15 C 20 db ? good 3rd order intercept of +18 dbm ? single -1v, no current supply bias applications ? microwave radio systems ? satellite vsat, dbs up/down link ? lmds & pt-pt mmw long haul ? broadband wireless access (including 802.16 and 802.20 wimax) ? wll and mmds loops ? commercial grade military attention: observe precautions for handling electrostatic sensitive devices. esd machine model (class a) esd human body model (class 0) refer to agilent application note a004r: electrostatic discharge damage and control. chip size: 1300 x 1400 m chip size tolerance: 10 m ( 0.4 mils) chip thickness: 100 10 m (4 0.4 mils) if1 if2 gate drain vg vg
2 ammc-6530 typical performance [2, 3] (t a = 25 c, v g = -1v, if frequency = 1 ghz, z o =50 ? ) symbol parameters and test conditions units gate pumped drain pumped f rf rf frequency range ghz 5 C 30 5 C 30 f lo lo frequency range ghz 5 C 30 5 C 30 f if if frequency range ghz dc C 5 dc C 5 down conversion up conversion down conversion p lo lo port pumping power dbm >10 >0 >10 cg rf to if conversion gain db -10 -15 -8 rl_rf rf port return loss db 5 5 10 rl_lo lo port return loss db 10 10 5 rl_if if port return loss db 10 10 10 ir image rejection ratio db 15 15 15 lo-rf iso. lo to rf port isolation db 22 25 22 lo-if iso. lo to if port isolation db 25 25 25 rf-if iso. rf to if port isolation db 15 15 15 iip3 input ip3, fdelta=100 mhz, dbm 18 10 prf = -10 dbm, plo = 15 dbm p-1 input port power at 1db gain dbm 8 0 compression point, plo=+10 dbm nf noise figure db 10 12 notes: 2. small/large signal data measured in a fully de-embedded test fixture form t a = 25 c. 3. specifications are derived from measurements in a 50 ? test environment. ammc-6530 rf specifications in drain pumped test configuration [4, 5, 6] (t a = 25 c, v g = -1.0v, p lo = +10 dbm, z o = 50 ? ) symbol parameters and test conditions units min typ. max cg conversion gain f = 7 ghz db -12.0 -10.5 f = 18 ghz db -10.0 -8.0 f = 2 8 ghz db -12.5 -10.0 ir image rejection ratio db -23.5 -18 notes: 4. performance verified 100% on-wafer. 5 . 100% on - wafer rf testing is done at rf frequency = 7, 18, and 2 8 ghz; if frequency = 2 ghz. 6. the external 90 degree hybrid coupler is from m/a-com: pn 2032-6344-00. frequency 1.0 C 2.0 ghz. ammc-6530 dc specifications/physical properties [1] symbol parameters and test conditions units typ. i g gate supply current (under any rf power drive and temperature) ma 0 v g gate supply operating voltage v -1v note: 1. ambient operational temperature t a =25 c unless otherwise noted.
3 ammc-6530 typical performance under gate pumped down conversion operation (t a = 25 c, v g = -1v, z o = 50 ? ) figure 1. conversion gain with if terminated for low side conversion lo=+10 dbm, if=1 ghz. frequency (ghz) conversion gain (db) 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 530 15 10 20 25 usb(db) lsb(db) figure 2. conversion gain with if terminated for high side conversion lo=+10 dbm, if=1 ghz. frequency (ghz) conversion gain (db) 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 530 15 10 20 25 usb(db) lsb(db) figure 3. rf port input power p-1db. lo=+10 dbm, if=1 ghz. frequency (ghz) input power (db) 15 10 5 0 -5 530 15 10 20 25 figure 4. noise figure. lo=+7 dbm, if=1 ghz. frequency (ghz) noise figure (db) 20 15 10 5 0 530 15 10 20 25 figure 5. input 3rd order intercept point. if=1 ghz. frequency (ghz) iip3 (dbm) 25 20 15 10 5 530 15 10 20 25 plo=15(dbm) plo=10(dbm) figure 6. conversion gain vs. lo power. rf=21 ghz (-20 dbm), lo=20 ghz. lo power (dbm) conversion gain (db) 0 -5 -10 -15 -20 -25 -10 20 0 -5 5 10 15 note: the external 90 hybrid coupler is from m/a-com: pn 2032-6344-00. frequency is 1.0 C 2.0 ghz. highly linear down conversion or up conversion mixer application (gate pumped mixer operation) -1v lo rf usb lsb if1 if2 gate drain vg vg
4 ammc-6530 typical performance under gate pumped down conversion operation (t a = 25 c, v g = -1v, z o =50 ? ) figure 7. conversion gain and match vs. if frequency. rf=20 ghz, lo=10 dbm. frequency (ghz) conversion gain (db), return loss (db) 0 -5 -10 -15 -20 06 2 1 3 5 4 conv. gain (db) return loss (db) figure 8. conversion gain vs. gate voltage. rf=20 ghz, lo=10 dbm. vg (v) conversion gain (db) 0 -5 -10 -15 -20 -2 -0.5 -1.5 -1 figure 9. rf & lo return loss. lo=10 dbm. frequency (ghz) return loss (db) 0 -5 -10 -15 -20 030 15 10 5 20 25 rf lo figure 10. isolation. lo=+10 dbm, if=1 ghz. frequency (ghz) isolation (db) 60 50 40 30 20 10 0 530 15 10 20 25 rf-if lo-if lo-rf
5 figure 11. up-conversion gain with if terminated for low side conversion. lo=+5 dbm, if=+5 dbm, if=1 ghz. frequency (ghz) conversion gain (db) 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 530 15 10 20 25 usb (db) lsb (db) figure 12. up-conversion gain wth if terminated for high side conversion. lo=+5 dbm, if=+5 dbm, if=1 ghz. frequency (ghz) conversion gain (db) 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 530 15 10 20 25 usb (db) lsb (db) figure 13. lo-rf up-conversion isolation. frequency (ghz) isolation (db) 0 -5 -10 -15 -20 -25 -30 -35 -40 530 15 10 20 25 figure 14. up-conversion gain vs. pumping power. lo power=if power, if=1 ghz, rf=25 ghz. plo=pif (db) conversion loss (db) -5 -7 -9 -11 -13 -15 020 6 4 8 12 16 18 2 10 14 ammc-6530 typical performance under gate pumped up conversion operation (t a = 25 c, v g = -1v, z o =50 ? ) lo rf usb lsb if1 if2 gate drain vg vg -1v
6 ammc-6530 typical performance under drain pumped down conversion operation (t a = 25 c, v g = -1v, z o = 50 ? ) figure 15. conversion gain with if terminated for low side conversion. lo=+10 dbm, if=1 ghz. frequency (ghz) conversion gain (db) 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 530 15 10 20 25 usb (db) lsb (db) figure 16. conversion gain with if terminated for high side conversion. lo=+10 dbm, if=1 ghz. frequency (ghz) conversion gain (db) 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 530 15 10 20 25 usb(dbm) lsb(dbm) figure 17. rf port input power p-1db. lo=+10 dbm, if=1 ghz. frequency (ghz) input power (dbm) 15 10 5 0 -5 530 15 10 20 25 figure 18. noise figure. lo=+7 dbm, if=1 ghz. frequency (ghz) noise figure (db) 20 15 10 5 0 530 15 10 20 25 figure 19. input 3rd order intercept point. if=1 ghz. flo (db) iip3 (dbm) 25 20 15 10 5 0 530 15 10 20 25 plo=10(dbm) plo=15(dbm) figure 20. conversion gain vs. lo power. rf=21 ghz (-20 dbm), lo=20 ghz. lo power (dbm) conversion gain (db) 0 -5 -10 -15 -20 -25 -10 20 0 -5 5 10 15 note: the external 90 hybrid coupler is from m/a-com: pn 2032-6344-00. frequency is 1.0 C 2.0 ghz. low conversion loss mixer configuration (drain pumped mixer operation) lo rf usb lsb -1v if1 if2 gate drain vg vg
7 biasing and operation the recommended dc bias condition for optimum performance, and reliability is vg = -1 volts. this can be applied to either of the two vg connec- tions as they are internally connected. there is no current consumption for the gate biasing because the fet mixer was designed for passive operation. for down conversion, the ammc-6530 may be configured in a low loss or high linearity application. in a low loss configu- ration, the lo is applied through the drain. in this configuration, the ammc-6530 is a drain pumped mixer. for higher linearity applications, the lo is applied through the gate. in this configuration, the ammc-6530 is a gate pumped mixer (or resistive mixer). the mixer is also suitable for up-conversion applications under the gate pumped mixer operation shown on page 5. please note that the image rejection and isolation perfor- mance is dependent on the selection of the low frequency quadrature hybrid. the perfor- mance specification of the low frequency quadrature hybrid as well as the phase balance and vswr of the interface to the ammc-6530 will affect the overall mixer performance. figure 21. simplified mmic schematic. figure 22. ammc-6530 bond pad locations. if1 if2 gate drain vg vg
assembly techniques the backside of the mmic chip is rf ground. for microstrip applications the chip should be attached directly to the ground plane (e.g. circuit carrier or heatsink) using electrically conductive epoxy [1] . for best performance, the topside of the mmic should be brought up to the same height as the circuit surrounding it. this can be accomplished by mounting a gold plate metal shim (same length and width as the mmic) under the chip which is of correct thickness to make the chip and adjacent circuit the same height. the amount of epoxy used for the chip and/or shim attachment should be just enough to provide a thin fillet around the bottom perimeter of the chip or shim. the ground plane should be free of any residue that may jeopar- dize electrical or mechanical attachment. the location of the rf bond pads is shown in figure 23. note that all the rf input and output ports are in a ground-signal-ground configuration. rf connections should be kept as short as reasonable to minimize performance degradation due to undesirable series inductance. a single bond wire is normally sufficient for signal connections, however double bonding with 0.7 mil gold wire or use of gold mesh [2] is recommended for best performance, especially near the high end of the frequency band. thermosonic wedge bonding is the preferred method for wire attachment to the bond pads. gold mesh can be attached using a 2 mil round tracking tool and a tool force of approximately 22 grams and a ultrasonic power of roughly 55 db for a duration of 76 8 ms. the guided wedge at an untrasonic power level of 64 db can be used for 0.7 mil wire. the recommended wire bond stage temperature is 150 2 c. caution should be taken to not exceed the absolute maximum rating for assembly temperature and time. the chip is 100 m thick and should be handled with care. this mmic has exposed air bridges on the top surface and should be handled by the edges or with a custom collet (do not pick up the die with a vacuum on die center). this mmic is also static sensitive and esd precautions should be taken. notes: 1. ablebond 84-1 lm1 silver epoxy is recommended. 2. buckbee-mears corporation, st. paul, mn, 800-262-3824 rf/lo lo/rf vg gnd if1 if2 figure 23. ammc-6530 assembly diagram. part number ordering information devices part number per container AMMC-6530-W10 10 ammc-6530-w50 50 www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (916) 788-6763 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (+65) 6756 2394 india, australia, new zealand: (+65) 6755 1939 japan: (+81 3) 3335-8152(domestic/international), or 0120-61-1280(domestic only) korea: (65) 6755 1989 singapore, malaysia, vietnam, thailand, philippines, indonesia: (65) 6755 2044 taiwan: (65) 6755 1843 data subject to change. copyright ? 2005 agilent technologies, inc. obsoletes 5989-3670en september 2 1 , 2005 5989-3945en
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